Catan
Guest
Hello everyone, I am a doctorate of the faculty of roma physics, to wisdom.
I worked on the realization of a particle silicon tracker for the jlab12 experiment and after years to simulate with pspice they recommended the passage to ansys workbench or to solidworks.
the choice on wb is relapsed by the fact that the university has the licenses for wb 13.0.
for now I have made the model of the very simple detector (a layer of aluminum thick 10 um put through a gold point to 70v, a bulk of silicon from 300 um and another layer from 10 um of aluminum put to 0 v).
now using electric I managed to implement this model, using data engineering I have inserted the right materials of my detector.
the underlying problem is that I can only do stady-state simulations, that is static simulations, where obviously the software does what I expect from the theory, that is one face goes to 70v and the other to 0, with the shaving within it from 70v to 0v (the silicon if though drugged n, remains always an insulator, so there are no areas of short and therefore there is a similar distribution)
the problem is that the ultimate simulation really is to make some small surfaces to imply with a signal of 200 na for the duration of 40ns on the area placed at 0v (a very gross value of charge released from a particle), and to check if these "impulses" generate "disturbs" on the plane place to 70v. (to simplify the speech is the stone effect in the stango, I throw a rock and I see the waves that propagate and what they put to disappear)
in case there are "disturbs" to the equipotentiality of the plan (it is not said since there are 300 um of silicon between the two floors), check how long these are reabsorbed (technically if I have many particles and the plan is not equivalent, I could have a difference of revelation between particle and particles and not have a uniform gain).
That is, I must be able to do simulations in the transient or transient and not in the static.
Unfortunately I have serious difficulty finding this function, in the menus I found a transiet structural and a transient thermal, but they are things for now I do not need (perhaps the transient thermal but speaks in the future).
if someone can give me a hand, while telling me if actually wb 13.0 does electrical simulations in the transient (I hope you see the completeness and cost of the simulator), maybe posting me some guidance of a similar job (I looked for several tutorials but I found nothing. ).
I'm sorry if I look unexperienced, but you know what kind of media has Italian research, so the only support I've had was a copy of the program, all the rest I'm learning from self-taught.
Thank you all!
fulvio
I worked on the realization of a particle silicon tracker for the jlab12 experiment and after years to simulate with pspice they recommended the passage to ansys workbench or to solidworks.
the choice on wb is relapsed by the fact that the university has the licenses for wb 13.0.
for now I have made the model of the very simple detector (a layer of aluminum thick 10 um put through a gold point to 70v, a bulk of silicon from 300 um and another layer from 10 um of aluminum put to 0 v).
now using electric I managed to implement this model, using data engineering I have inserted the right materials of my detector.
the underlying problem is that I can only do stady-state simulations, that is static simulations, where obviously the software does what I expect from the theory, that is one face goes to 70v and the other to 0, with the shaving within it from 70v to 0v (the silicon if though drugged n, remains always an insulator, so there are no areas of short and therefore there is a similar distribution)
the problem is that the ultimate simulation really is to make some small surfaces to imply with a signal of 200 na for the duration of 40ns on the area placed at 0v (a very gross value of charge released from a particle), and to check if these "impulses" generate "disturbs" on the plane place to 70v. (to simplify the speech is the stone effect in the stango, I throw a rock and I see the waves that propagate and what they put to disappear)
in case there are "disturbs" to the equipotentiality of the plan (it is not said since there are 300 um of silicon between the two floors), check how long these are reabsorbed (technically if I have many particles and the plan is not equivalent, I could have a difference of revelation between particle and particles and not have a uniform gain).
That is, I must be able to do simulations in the transient or transient and not in the static.
Unfortunately I have serious difficulty finding this function, in the menus I found a transiet structural and a transient thermal, but they are things for now I do not need (perhaps the transient thermal but speaks in the future).
if someone can give me a hand, while telling me if actually wb 13.0 does electrical simulations in the transient (I hope you see the completeness and cost of the simulator), maybe posting me some guidance of a similar job (I looked for several tutorials but I found nothing. ).
I'm sorry if I look unexperienced, but you know what kind of media has Italian research, so the only support I've had was a copy of the program, all the rest I'm learning from self-taught.
Thank you all!
fulvio